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        NTMFS5C670NL
        Power MOSFET 60 V, 6.1 m, 71 A, Single N−Channel
        Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
        MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
        Parameter Symbol Value Unit
        Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V
        Continuous Drain Current RJC (Notes 1, 3) Steady State
        TC = 25°C ID 71 A TC = 100°C 50
        Power Dissipation RJC (Note 1)
        TC = 25°C PD 61 W TC = 100°C 31
        Continuous Drain Current RJA (Notes 1, 2, 3) Steady State
        TA = 25°C ID 17 A TA = 100°C 12
        Power Dissipation RJA (Notes 1 & 2)
        TA = 25°C PD 3.6 W TA = 100°C 1.8 Pulsed Drain Current TA = 25°C, tp = 10 s IDM 440 A
        Operating Junction and Storage Temperature TJ, Tstg −55 to +175
        °C
        Source Current (Body Diode) IS 68 A
        Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.6 A)
        EAS 166 mJ
        Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
        TL 260 °C
        Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
        THERMAL RESISTANCE MAXIMUM RATINGS
        Parameter Symbol Value Unit Junction−to−Case − Steady State RJC 2.4 °C/W
        Junction−to−Ambient − Steady State (Note 2) RJA 41
        1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
        MARKING DIAGRAM
        www.onsemi.com
        5C670L = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability
        5C670L AYWZZ
        V(BR)DSS RDS(ON) MAX ID MAX
        60 V
        6.1 m @ 10 V
        71 A
        8.8 m @ 4.5 V
        G (4)
        S (1,2,3)
        N−CHANNEL MOSFET
        D (5)
        S S S G
        D
        D
        D
        D
        DFN5 (SO−8FL) CASE 488AA STYLE 1
        1
        See detailed ordering, marking and shipping information on

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